2021年7月13日火曜日

EUPEC BSM35GB120DLC

EUPEC BSM35GB120DLC
#BSM35GB120DLC EUPEC BSM35GB120DLC New Insulated Gate Bipolar Transistor 75A I(C) 1200V V(BR)CES N-Channel, BSM35GB120DLC pictures, BSM35GB120DLC price, #BSM35GB120DLC supplier
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Manufacturer Part Number: BSM35GB120DLC
Part Life Cycle Code: Obsolete
Ihs Manufacturer: EUPEC GMBH & CO KG
Manufacturer: Eupec Gmbh & Co Kg
Risk Rank: 5.64
Case Connection: ISOLATED
Collector Current-Max (IC): 75 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X7
Number of Elements: 2
Number of Terminals: 7
Operating Temperature-Max: 125 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 310 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 370 ns
Turn-on Time-Nom (ton): 110 ns
VCEsat-Max: 2.6 V
Insulated Gate Bipolar Transistor 75A I(C) 1200V V(BR)CES N-Channel

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