2021年7月12日月曜日

Fuji 2MBI100U4A-120

Fuji 2MBI100U4A-120
The 2MBI100U4A-120-50 is a N-channel IGBT Array and Module Transistor 1200V collector-emitter voltage and 540W collector power dissipation. ±20V Gate-emitter voltage 2500VAC Isolation voltage #2MBI100U4A-120 Fuji 2MBI100U4A-120 New The 2MBI100U4A-120-50 is a N-channel IGBT Array and Module Transistor 1200V collector-emitter voltage and 540W collector power dissipation., 2MBI100U4A-120 pictures, 2MBI100U4A-120 price, #2MBI100U4A-120 supplier
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2MBI100U4A-120-50

Transistor Polarity: N Channel

DC Collector Current: 150A

Collector Emitter Saturation Voltage Vce(on): 2.2V

Power Dissipation Pd: 540W

Collector Emitter Voltage V(br)ceo: 1.2kV

Transistor Case Style: Module No. of Pins: 7Pins

Operating Temperature Max: 125°C

Product Range: -

SVHC: To Be Advised
The 2MBI100U4A-120-50 is a N-channel IGBT Array and Module Transistor 1200V collector-emitter voltage and 540W collector power dissipation.

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